2
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
Table 4. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
= 100
μ
Adc)
V(BR)DSS
60
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
= 60 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 10 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
0.3
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 12.5 Vdc, I
D
= 400
μA)
VGS(th)
1
?
2.6
Vdc
Drain-Source On-Voltage
(VGS
= 5 Vdc, I
D
= 0.6 A)
RDS(on)
?
?
0.7
Ω
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2.0 Adc)
VDS(on)
?
?
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Ciss
?
?
250
pF
Output Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Coss
?
?
150
pF
Reverse Transfer Capacitance
(VDS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Crss
?
?
20
pF
RF Characteristics
(In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA) f = 520 MHz
Gps
?
13.5
?
dB
Drain Efficiency
(VDD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA) f = 520 MHz
η
?
55
?
%
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